SUBSTRATE-TEMPERATURE LOWERING IN GAAS SELECTIVE EPITAXIAL-GROWTH BY MOLECULAR-BEAM EPITAXY

被引：17

作者：

OKAMOTO, A

OHATA, K

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 07期

关键词：

D O I：

10.1063/1.344094

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3413 / 3415

页数：3

共 13 条

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