ELECTRON TRAPPING IN THIN OXIDE ON N-INP

被引：19

作者：

EFTEKHARI, G

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 04期

关键词：

D O I：

10.1116/1.586936

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electron trapping in anodized thin oxide on InP was studied using the flatband voltage method. Aluminum and gold were used as the contact metal. Three trap sites for aluminum contact and two trap sites for gold contact were obtained. Rapid thermal annealing (500-degrees-C, 30 s) of oxide before metal evaporation caused reduction in trap density and capture cross section. Similar annealing of oxide after metal evaporation resulted in similar information except a new trap site is generated in the case of gold contact.

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页码：1317 / 1318

页数：2

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