EFFECT OF RAPID THERMAL ANNEALING ON ELECTRON TRAPPING IN THIN OXIDE ON N-TYPE GAAS

被引：4

作者：

EFTEKHARI, G

机构：

[1] Department of Electrical Engineering, State University of New York, College at New Paltz, NY

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 03期

关键词：

III-V SEMICONDUCTORS; INTERFACES; FILMS; ELECTRON TRAPPING; RAPID THERMAL ANNEALING;

D O I：

10.1143/JJAP.31.832

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electron trapping in the thin oxide layer of Al and Ta-n-type GaAs Metal Insulator Semiconductor (MIS) structure was studied using the flat-band voltage shift. Three trap sites for the Al contact and two for the Ta contact were obtained. The rapid thermal annealing of oxide caused changes in trap characteristics and elimination of one trap site in the Al contact.

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收藏

页码：832 / 834

页数：3

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