P ON N ION-IMPLANTED JUNCTIONS IN LIQUID-PHASE EPITAXY HGCDTE LAYERS ON CDTE SUBSTRATES

被引：36

作者：

BUBULAC, LO

LO, DS

TENNANT, WE

EDWALL, DD

CHEN, JC

RATUSNIK, J

ROBINSON, JC

BOSTRUP, G

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 22期

关键词：

D O I：

10.1063/1.97788

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1586 / 1588

页数：3

相关论文

共 9 条

[1] DEPENDENCE OF JUNCTION FORMATION ON SUBSTRATE IN IMPLANTED HGCDTE
BUBULAC, LO
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 976 - 978
[2] BORON AND INDIUM ION-IMPLANTED JUNCTIONS IN HGCDTE GROWN ON CDTE AND CDTE/AL2O3
BUBULAC, LO
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[3] BEHAVIOR OF IMPLANTATION-INDUCED DEFECTS IN HGCDTE
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MAGEE, TJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01): : 251 - 254
[4] INDIUM ION-IMPLANTATION IN HG0.78CD0.22TE/CDTE
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01): : 171 - 175
[5] ION-IMPLANTATION IN HG1-XCDXTE
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[6] DEWAMES E, UNPUB
[7] FORMATION OF P-PHOTODIODES ON N-PHOTODIODES IN HG1-XCDXTE BY ION-IMPLANTATION AND CW CO2-LASER ANNEALING
KALISH, R
BAHIR, G
[J]. JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) : 474 - 477
[8] ION-IMPLANTATION DOPING OF CD0.2HG0.8TE FOR INFRARED DETECTORS
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KRUGER, W
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) : 58 - 62
[9] ELECTRICAL-ACTIVITY, MODE OF INCORPORATION AND DISTRIBUTION COEFFICIENT OF GROUP-V ELEMENTS IN HG1-XCDXTE GROWN FROM TELLURIUM RICH LIQUID-PHASE EPITAXIAL-GROWTH SOLUTIONS
VYDYANATH, HR
ELLSWORTH, JA
DEVANEY, CM
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (01) : 13 - 25