A LOW-NOISE N+NP GERMANIUM AVALANCHE PHOTO-DIODE

被引：22

作者：

MIKAWA, T ^{[1
]}

KAGAWA, S ^{[1
]}

KANEDA, T ^{[1
]}

SAKURAI, T ^{[1
]}

ANDO, H ^{[1
]}

MIKAMI, O ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1981年 / 17卷 / 02期

关键词：

D O I：

10.1109/JQE.1981.1071082

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：210 / 216

页数：7

共 15 条

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