RADIATION TOLERANCE OF THE FOXFET BIASING SCHEME FOR AC-COUPLED SI MICROSTRIP DETECTORS

被引：9

作者：

BACCHETTA, N

BISELLO, D

CANALI, C

DAROS, R

FUOCHI, PG

FUSARO, G

GIRALDO, A

GOTRA, Y

PACCAGNELLA, A

VERZELLESI, G

机构：

[1] INFN, SEZ PADOVA, I-35131 PADUA, ITALY

[2] UNIV PADUA, DIPARTIMENTO FIS, I-35131 PADUA, ITALY

[3] UNIV MODENA, FAC INGN, I-41100 MODENA, ITALY

[4] CNR, FRAE, I-40126 BOLOGNA, ITALY

[5] UNIV PADUA, DIP ELETTRON & INFORMAT, I-35131 PADUA, ITALY

[6] UNIV CAGLIARI, IST ELETTROTECN, I-09123 CAGLIARI, ITALY

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1993年 / 40卷 / 06期

关键词：

D O I：

10.1109/23.273500

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The radiation response of FOXFETs has been studied for proton, gamma and neutron exposures. The punch-through behaviour, which represents the normal FET operating conditions in Si microstrip detectors, has been found to be much less sensitive to radiation damage than threshold voltage. The device performance has been elucidated by means of two-dimensional simulations. The main radiation effects have been also taken into account in the numerical analysis and separately examined.

引用

页码：1602 / 1609

页数：8

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