BAND-GAP OF THE GE(111)2X1 AND SI(111)2X1 SURFACES BY SCANNING TUNNELING SPECTROSCOPY

被引：38

作者：

FEENSTRA, RM

机构：

[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.44.13791

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The scanning tunneling microscope is used to measure the spectrum of states for the Ge(111)2 x 1 and Si(111)2 x 1 surfaces. Detailed spectra, revealing the entire empty and filled state bands for both surfaces are obtained. Band gaps of 0.65 +/- 0.09 eV and 0.50 +/- 0.05 eV are found for the Ge and Si surfaces, respectively. The results are compared with values for the band gaps obtained from recent quasiparticle calculations.

引用

页码：13791 / 13794

页数：4

共 21 条

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