BAND-GAP OF THE GE(111)2X1 AND SI(111)2X1 SURFACES BY SCANNING TUNNELING SPECTROSCOPY

被引:38
作者
FEENSTRA, RM
机构
[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights
来源
PHYSICAL REVIEW B | 1991年 / 44卷 / 24期
关键词
D O I
10.1103/PhysRevB.44.13791
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The scanning tunneling microscope is used to measure the spectrum of states for the Ge(111)2 x 1 and Si(111)2 x 1 surfaces. Detailed spectra, revealing the entire empty and filled state bands for both surfaces are obtained. Band gaps of 0.65 +/- 0.09 eV and 0.50 +/- 0.05 eV are found for the Ge and Si surfaces, respectively. The results are compared with values for the band gaps obtained from recent quasiparticle calculations.
引用
收藏
页码:13791 / 13794
页数:4
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