SLOW TRAPPING MEASUREMENTS IN THE INSB ANODIC OXIDE INTERFACE

被引：3

作者：

ADAR, R

BLOOM, I

NEMIROVSKY, Y

机构：

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 02期

关键词：

D O I：

10.1016/0038-1101(89)90176-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：111 / 118

页数：8

共 11 条

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