Engineered heterostructures of 6.1 angstrom III-V semiconductors for advanced electronic and optoelectronic applications

被引：14

作者：

Shanabrook, BV ^{[1
]}

Barvosa-Carter, W ^{[1
]}

Bass, R ^{[1
]}

Bennett, BR ^{[1
]}

Boos, JB ^{[1
]}

Bewley, WW ^{[1
]}

Bracker, AS ^{[1
]}

Culbertson, JC ^{[1
]}

Glaser, ER ^{[1
]}

Kruppa, W ^{[1
]}

Magno, R ^{[1
]}

Moore, WJ ^{[1
]}

Meyer, JR ^{[1
]}

Nosho, BZ ^{[1
]}

Park, D ^{[1
]}

Thibado, PM ^{[1
]}

Twigg, ME ^{[1
]}

Wagner, RJ ^{[1
]}

Waterman, JR ^{[1
]}

Whitman, LJ ^{[1
]}

Yang, MJ ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

ENGINEERED NANOSTRUCTURAL FILMS AND MATERIALS | 1999年 / 3790卷

关键词：

high-speed electronics; IR lasers; IR detectors; band structure engineering; epitaxy; InAs; GaSb; AlSb;

D O I：

10.1117/12.351249

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Heterostructures formed from III-V semiconductors with the 6.1 Angstrom lattice spacing (InAs, GaSb, AlSb and related alloys) have attracted significant interest because of their potential to define a new 'state of the art' in applications including 100 GHz high-speed logic circuits, terahertz transistors, sensitive infrared detectors and mid-infrared semiconductor lasers. In this paper, we describe the ongoing work at the Naval Research Laboratory to develop the materials growth and fabrication technology for a variety of 6.1 A-based devices which have the potential to revolutionize infrared optoelectronics and low-power, high-speed electronics.

引用

页码：13 / 22

页数：10

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