EFFECT OF POST-SILICIDATION ANNEALING ON TISI2/P+-N SI JUNCTIONS

被引：5

作者：

DELFINO, M

MORGAN, AE

BROADBENT, EK

MAILLOT, P

SADANA, DK

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 05期

关键词：

D O I：

10.1063/1.339573

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1882 / 1886

页数：5

共 17 条

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