OPTICAL CHARACTERIZATION OF STRESS IN NARROW GAAS STRIPES ON PATTERNED SI SUBSTRATES

被引：17

作者：

DEBOECK, J ^{[1
]}

DENEFFE, K ^{[1
]}

CHRISTEN, J ^{[1
]}

ARENT, DJ ^{[1
]}

BORGHS, G ^{[1
]}

机构：

[1] TECH UNIV BERLIN,D-1000 BERLIN,FED REP GER

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 04期

关键词：

D O I：

10.1063/1.101894

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：365 / 367

页数：3

共 14 条

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[5] MATERIAL PROPERTIES OF HIGH-QUALITY GAAS EPITAXIAL LAYERS GROWN ON SI SUBSTRATES
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[6] NEAR-GAP PHOTOLUMINESCENCE OF GAAS GROWN DIRECTLY ON SILICON
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[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (10) : 5110 - 5116
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[8] TENSILE-STRESS VARIATIONS OF CHEMICALLY ETCHED GAAS FILMS GROWN ON SI SUBSTRATES
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[J]. APPLIED PHYSICS LETTERS, 1988, 53 (24) : 2394 - 2396
[9] EMBEDDED GROWTH OF GALLIUM-ARSENIDE IN SILICON RECESSES FOR A COPLANAR GAAS ON SI TECHNOLOGY
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ARENT, DJ
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (01): : 116 - 119
[10] PIEZO-ELECTROREFLECTANCE IN GE GAAS AND SI
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