A NEW EMITTER DESIGN OF INGAP/GAAS HBTS FOR HIGH-FREQUENCY APPLICATIONS

被引：14

作者：

HU, J

ZHANG, QM

SURRIDGE, RK

XU, JM

PAVLIDIS, D

机构：

[1] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,ANN ARBOR,MI 48109

[2] UNIV TORONTO,DEPT ELECT ENGN,TORONTO M5S 1A4,ONTARIO,CANADA

来源：

IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 12期

关键词：

D O I：

10.1109/55.260790

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new HBT structure using an AlGaAs-InGaP emitter is proposed. The AlGaAs-InGaP configuration introduces an electron launcher in the emitter and makes use of the velocity overshoot effect. This enhances the emitter transport and reduces the electron accumulation in the emitter. Simulations show that, by using the AlGaAs-InGaP structure, the emitter charging time can be greatly reduced compared to the conventional AlGaAs emitter design. As a result, the cutoff frequency can be substantially increased. A cutoff frequency of 245 GHz has been predicted for the proposed design.

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收藏

页码：563 / 565

页数：3

相关论文

共 10 条

[1] BAND-STRUCTURE ENHANCEMENT OF INDIRECT TRANSITIONS [J].

AUVERGNE, D ;

MERLE, P ;

MATHIEU, H .

SOLID STATE COMMUNICATIONS, 1977, 21 (05) :437-439

[2] CONDUCTION-BAND AND VALENCE-BAND OFFSETS IN GAAS/GA0.51IN0.49P SINGLE QUANTUM-WELLS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

BISWAS, D ;

DEBBAR, N ;

BHATTACHARYA, P ;

RAZEGHI, M ;

DEFOUR, M ;

OMNES, F .

APPLIED PHYSICS LETTERS, 1990, 56 (09) :833-835

[3] BAND OFFSET OF GAAS/IN0.48GA0.52P MEASURED UNDER HYDROSTATIC-PRESSURE [J].

CHEN, JH ;

SITES, JR ;

SPAIN, IL ;

HAFICH, MJ ;

ROBINSON, GY .

APPLIED PHYSICS LETTERS, 1991, 58 (07) :744-746

[4] INNOVATIVE PASSIVATED HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY CBE [J].

DUBONCHEVALLIER, C ;

ALEXANDRE, F ;

BENCHIMOL, JL ;

DANGLA, J ;

AMARGER, V ;

HELIOT, F ;

BOURGUIGA, R .

ELECTRONICS LETTERS, 1992, 28 (25) :2308-2309

[5] INTERNAL PHOTOEMISSION AND ENERGY-BAND OFFSETS IN GAAS-GAINP P-I-N HETEROJUNCTION PHOTODIODES [J].

HAASE, MA ;

HAFICH, MJ ;

ROBINSON, GY .

APPLIED PHYSICS LETTERS, 1991, 58 (06) :616-618

[6] MONTE-CARLO STUDIES OF THE EFFECT OF EMITTER JUNCTION GRADING ON THE ELECTRON-TRANSPORT IN INALAS/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

HU, JT ;

PAVLIDIS, D ;

TOMIZAWA, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (06) :1273-1281

[7] BAND LINEUP FOR A GAINP/GAAS HETEROJUNCTION MEASURED BY A HIGH-GAIN NPN HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

KOBAYASHI, T ;

TAIRA, K ;

NAKAMURA, F ;

KAWAI, H .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (12) :4898-4902

[8] HETEROSTRUCTURE BIPOLAR-TRANSISTORS - WHAT SHOULD WE BUILD [J].

KROEMER, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :126-130

[9] ANALYSIS OF THE OPERATION OF GAALAS/GAAS HBTS [J].

TIWARI, S ;

FRANK, DJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (10) :2105-2121

[10]

ZHANG QM, 1990, USER MANUAL GPSDA