NUCLEATION AND GROWTH OF CVD DIAMOND ON MAGNESIUM-OXIDE (100) AND TITANIUM NITRIDE MAGNESIUM-OXIDE (100) SURFACES

被引：6

作者：

CHALKER, PR

JOHNSTON, C

ROMANI, S

AYRES, CF

BUCKLEYGOLDER, IM

机构：

[1] Surface Technologies Department, AEA Industrial Technology, Harwell Laboratory, Didcot

来源：

关键词：

D O I：

10.1016/0925-9635(94)90191-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The lattice parameters of cubic MgO(100) and TiN(100) are 4.23 angstrom and 4.21 angstrom respectively. As potential heteroepitaxial substrates for diamond films they represent a lattice mismatch of approximately 18%. This paper reports the nucleation of CVD diamond particles on MgO(100) surfaces using a low temperature process to overcome the thermal etching of the magnesium oxide substrate. Physically vapour-deposited TiN thin films have also been deposited onto MgO(100) substrates with preferred orientation. Doped and undoped CVD diamond was deposited onto TiN-MgO(100) substrates to investigate the influence of doping effects on low temperature nucleation and growth.

引用

页码：393 / 397

页数：5

共 18 条

[1] EPITAXIAL THIN-FILM GROWTH, CHARACTERIZATION AND DEVICE DEVELOPMENT IN MONOCRYSTALLINE ALPHA-SILICON AND BETA-SILICON CARBIDE [J].