AR INCORPORATION IN EPITAXIAL TIN FILMS DEPOSITED BY REACTIVE MAGNETRON SPUTTERING IN MIXED AR/N2 DISCHARGES

被引：34

作者：

HULTMAN, L ^{[1
]}

JOHANSSON, BO ^{[1
]}

SUNDGREN, JE ^{[1
]}

MARKERT, LC ^{[1
]}

GREENE, JE ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT MAT SCI & ENGN,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 13期

关键词：

D O I：

10.1063/1.100014

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1175 / 1177

页数：3

共 16 条

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[8] LOW-ENERGY ION IRRADIATION DURING FILM GROWTH FOR REDUCING DEFECT DENSITIES IN EPITAXIAL TIN(100) FILMS DEPOSITED BY REACTIVE-MAGNETRON SPUTTERING [J].

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[9]

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[10] GROWTH AND PROPERTIES OF SINGLE-CRYSTAL TIN FILMS DEPOSITED BY REACTIVE MAGNETRON SPUTTERING [J].

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