OPTICAL AND DIELECTRIC-CONSTANTS OF HAFNIUM AND ITS ANODIC OXIDE-FILMS

被引：18

作者：

SAXENA, AN

MITTAL, KL

机构：

[1] INT SCI CO,PRINCETON JUNCTION,NJ 08550

[2] IBM CORP,SYST PROD DIV,POUGHKEEPSIE,NY 12602

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 06期

关键词：

D O I：

10.1063/1.321959

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2788 / 2789

页数：2

相关论文

共 7 条

[1] DETERMINATION OF PROPERTIES OF FILMS ON SILICON BY METHOD OF ELLIPSOMETRY [J].

ARCHER, RJ .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1962, 52 (09) :970-&

[2] MEASUREMEMT OF THICKNESS AND REFRACTIVE INDEX OF VERY THIN FILMS AND OPTICAL PROPERTIES OF SURFACES BY ELLIPSOMETRY [J].

MCCRACKIN, FL ;

PASSAGLIA, E ;

STROMBERG, RR ;

STEINBERG, HL .

JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS SECTION A-PHYSICS AND CHEMISTRY, 1963, A 67 (04) :363-+

[3] ANALYSES AND CORRECTIONS OF INSTRUMENTAL ERRORS IN ELLIPSOMETRY [J].

MCCRACKIN, FL .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1970, 60 (01) :57-+

[4] ELLIPSOMETRY USING A RETARDATION PLATE AS COMPENSATOR [J].

OLDHAM, WG .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1967, 57 (05) :617-&

[5] EXACT ELLIPSOMETRIC MEASUREMENT OF THICKNESS AND OPTICAL PROPERTIES OF A THIN LIGHT-ABSORBING FILM WITHOUT AUXILIARY MEASUREMENTS [J].

PAIK, WK ;

BOCKRIS, JO .

SURFACE SCIENCE, 1971, 28 (01) :61-&

[6] CHANGES IN PHASE AND AMPLITUDE OF POLARIZED LIGHT REFLECTED FROM A FILM-COVERED SURFACE AND THEIR RELATIONS WITH FILM THICKNESS [J].

SAXENA, AN .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1965, 55 (09) :1061-&

[7] HAFNIUM-SILICON SCHOTTKY BARRIERS - LARGE BARRIER HEIGHT ON PARA-TYPE SILICON AND OHMIC BEHAVIOR ON TYPE SILICON [J].

SAXENA, AN .

APPLIED PHYSICS LETTERS, 1971, 19 (03) :71-+