PARTIAL EPITAXIAL-GROWTH OF NBSI2 ON SI(111)

被引:7
作者
CHANG, CS
NIEH, CW
CHU, JJ
CHEN, LJ
机构
关键词
D O I
10.1016/0040-6090(88)90258-1
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:263 / 271
页数:9
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