ATOMIC LAYER EPITAXY OF GAP AND ELUCIDATION FOR SELF-LIMITING MECHANISM

被引：28

作者：

SAKUMA, Y

KODAMA, K

OZEKI, M

机构：

[1] Fujitsu Laboratories Ltd., Atsugi 243-01

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 09期

关键词：

D O I：

10.1063/1.102675

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Atomic layer epitaxy (ALE) of GaP was performed for the first time in a low-pressure metalorganic vapor phase epitaxial (MOVPE) reactor using trimethylgallium (TMG) and phosphine (PH3) as sources. Growth was self-limiting for the exposure time of each reactant. X-ray photoelectron spectroscopy (XPS) analyses were carried out to identify the adsorbates on the growth surface. There were no methyl groups on the surface Ga and the self-limiting mechanism is due to the selective adsorption of TMG by the surface P atoms. When the substrate was exposed to a sufficient TMG flow after a submonolayer Ga was deposited by triethylgallium (TEG), growth was still self-limiting. This supports the selective adsorption model.

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页码：827 / 829

页数：3

相关论文

共 13 条

[1] KINETIC LIMITS OF MONOLAYER GROWTH ON (001) GAAS BY ORGANOMETALLIC CHEMICAL-VAPOR DEPOSITION [J].

ASPNES, DE ;

COLAS, E ;

STUDNA, AA ;

BHAT, R ;

KOZA, MA ;

KERAMIDAS, VG .

PHYSICAL REVIEW LETTERS, 1988, 61 (24) :2782-2785

[2] ATOMIC LAYER EPITAXY OF III-V BINARY COMPOUNDS [J].

BEDAIR, SM ;

TISCHLER, MA ;

KATSUYAMA, T ;

ELMASRY, NA .

APPLIED PHYSICS LETTERS, 1985, 47 (01) :51-53

[3]

DOI A, 1988, JPN J APPL PHYS 1, V27, P795, DOI 10.1143/JJAP.27.795

[4] INSITU X-RAY PHOTOELECTRON SPECTROSCOPIC STUDY OF GAAS GROWN BY ATOMIC LAYER EPITAXY [J].

KODAMA, K ;

OZEKI, M ;

MOCHIZUKI, K ;

OHTSUKA, N .

APPLIED PHYSICS LETTERS, 1989, 54 (07) :656-657

[5] MASS-SPECTROMETRIC STUDIES OF PHOSPHINE PYROLYSIS AND OMVPE GROWTH OF INP [J].

LARSEN, CA ;

BUCHAN, NI ;

STRINGFELLOW, GB .

JOURNAL OF CRYSTAL GROWTH, 1987, 85 (1-2) :148-153

[6] INSITU MASS-SPECTROSCOPY AND THERMOGRAVIMETRIC STUDIES OF GAAS MOCVD GAS-PHASE AND SURFACE-REACTIONS [J].

LEE, PW ;

OMSTEAD, TR ;

MCKENNA, DR ;

JENSEN, KF .

JOURNAL OF CRYSTAL GROWTH, 1987, 85 (1-2) :165-174

[7] MOLECULAR LAYER EPITAXY [J].

NISHIZAWA, J ;

ABE, H ;

KURABAYASHI, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (05) :1197-1200

[8] ATOMIC LAYER EPITAXY OF GAAS USING TRIETHYLGALLIUM AND ARSINE [J].

OHNO, H ;

OHTSUKA, S ;

ISHII, H ;

MATSUBARA, Y ;

HASEGAWA, H .

APPLIED PHYSICS LETTERS, 1989, 54 (20) :2000-2002

[9] NEW APPROACH TO THE ATOMIC LAYER EPITAXY OF GAAS USING A FAST GAS-STREAM [J].

OZEKI, M ;

MOCHIZUKI, K ;

OHTSUKA, N ;

KODAMA, K .

APPLIED PHYSICS LETTERS, 1988, 53 (16) :1509-1511

[10] EXAMINATION OF PRODUCT CATALYZED REACTION OF TRIMETHYLGALLIUM WITH PHOSPHINE AND MECHANISM OF CHEMICAL VAPOR-DEPOSITION OF GALLIUM-PHOSPHIDE AND GALLIUM-ARSENIDE [J].

SCHLYER, DJ ;

RING, MA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (04) :569-573