4-6 SEMICONDUCTOR LATERAL-COLLECTION PHOTODIODES

被引：9

作者：

HOLLOWAY, H

HURLEY, MD

SCHERMER, EB

机构：

来源：

APPLIED PHYSICS LETTERS | 1978年 / 32卷 / 01期

关键词：

D O I：

10.1063/1.89817

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：65 / 67

页数：3

共 13 条

[1] BACKSIDE-ILLUMINATED PB1-XSNX TE HETEROJUNCTION PHOTODIODE [J].

ANDREWS, AM ;

LONGO, JT ;

CLARKE, JE ;

GERTNER, ER .

APPLIED PHYSICS LETTERS, 1975, 26 (08) :438-441

[2] HIGH-SPEED PB1-XSNXTE PHOTODIODES [J].

ANDREWS, AM ;

PASKO, JG ;

GERTNER, ER ;

HIGGINS, JA ;

LONGO, JT .

APPLIED PHYSICS LETTERS, 1972, 21 (06) :285-&

[3] PERFORMANCE OF PBSNTE DIODES AT MODERATELY REDUCED BACKGROUNDS [J].

CHIA, PS ;

BALON, JR ;

LOCKWOOD, AH ;

RANDALL, DM ;

RENDA, FJ ;

DEVAUX, LH ;

KIMURA, H .

INFRARED PHYSICS, 1975, 15 (04) :279-285

[4] THERMAL LIMITATIONS IN PBSNTE DETECTORS [J].

DEVAUX, LH ;

KIMURA, H ;

SHEETS, MJ ;

RENDA, FJ ;

BALON, JR ;

CHIA, PS ;

LOCKWOOD, AH .

INFRARED PHYSICS, 1975, 15 (04) :271-277

[5] N-P JUNCTION PHOTODETECTORS IN INSB FABRICATED BY PROTON BOMBARDMENT [J].

FOYT, AG ;

LINDLEY, WT ;

DONNELLY, JP .

APPLIED PHYSICS LETTERS, 1970, 16 (09) :335-&

[6] EPITAXIAL PBSE AND PB1-CHI SN CHI SE - GROWTH AND ELECTRICAL PROPERTIES [J].

HOHNKE, DK ;

KAISER, SW .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) :892-897

[7] THIN-FILM (PB,SN)SE PHOTODIODES FOR 8-12-MU-M OPERATION [J].

HOHNKE, DK ;

HOLLOWAY, H ;

YEUNG, KF ;

HURLEY, M .

APPLIED PHYSICS LETTERS, 1976, 29 (02) :98-100

[8] EPITAXIAL PBSE SCHOTTKY-BARRIER DIODES FOR INFRARED DETECTION [J].

HOHNKE, DK ;

HOLLOWAY, H .

APPLIED PHYSICS LETTERS, 1974, 24 (12) :633-635

[9] EPITAXIAL GROWTH OF LEAD TIN TELLURIDE [J].

HOLLOWAY, H ;

LOGOTHETIS, EM ;

WILKES, E .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (08) :3543-+

[10] LOW-CAPACITANCE PBTE PHOTODIODES [J].

HOLLOWAY, H ;

YEUNG, KF .

APPLIED PHYSICS LETTERS, 1977, 30 (04) :210-212

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