ELECTRON-TRANSPORT IN OXYGENATED AMORPHOUS HYDROGENATED SILICON PREPARED BY REACTIVE SPUTTERING

被引:3
作者
JIRANAPAKUL, K
SHIRAFUJI, J
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 04期
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D O I
10.1143/JJAP.26.517
中图分类号
O59 [应用物理学];
学科分类号
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页码:517 / 523
页数:7
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