SATURATION OF RADIATION-INDUCED THRESHOLD-VOLTAGE SHIFTS IN THIN-OXIDE MOSFETS AT 80-K

被引：7

作者：

KLEIN, RB ^{[1
]}

SAKS, NS ^{[1
]}

SHANFIELD, Z ^{[1
]}

机构：

[1] USN, RES LAB, WASHINGTON, DC 20375 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1990年 / 37卷 / 06期

关键词：

D O I：

10.1109/23.101178

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hole trapping in thin-oxide MOSFETs at 80 K is examined. The existing “field-collapse” model accurately predicts saturation of the hole trapping in a 26 nm oxide, but overestimates the saturation by a factor of two in a 9.5 nm oxide. A revised model, which incorporates recombination of electrons with previously trapped holes, improves the fit between the model and the data. © 1990 IEEE

引用

页码：1690 / 1695

页数：6

共 28 条

[11] A RELIABLE APPROACH TO CHARGE-PUMPING MEASUREMENTS IN MOS-TRANSISTORS [J].

GROESENEKEN, G ;

MAES, HE ;

BELTRAN, N ;

DEKEERSMAECKER, RF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (01) :42-53

[12] HOLE TRAPPING, RECOMBINATION AND SPACE-CHARGE IN IRRADIATED SANDIA OXIDES [J].

HUGHES, RC ;

SEAGER, CH .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4049-4053

[13] HOLE TRANSPORT IN MOS OXIDES [J].

HUGHES, RC ;

EERNISSE, EP ;

STEIN, HJ .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2227-2233

[14] APPLIED FIELD AND TOTAL DOSE DEPENDENCE OF TRAPPED CHARGE BUILDUP IN MOS DEVICES [J].

KRANTZ, RJ ;

AUKERMAN, LW ;

ZIETLOW, TC .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) :1196-1201

[15]

Manzini S., 1983, Insulating Films on Semiconductors. Proceedings of the International Conference INFOS 83, P112

[16]

MCLEAN FB, 1987, HDLTR2117 H DIAM LAB

[17] RADIATION-INDUCED SPACE-CHARGE BUILDUP IN MOS STRUCTURES [J].

MITCHELL, JP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) :764-+

[18] HIGH-FIELD CAPTURE OF ELECTRONS BY COULOMB-ATTRACTIVE CENTERS IN SILICON DIOXIDE [J].

NING, TH .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) :3203-3208

[19] CAPTURE CROSS-SECTION AND TRAP CONCENTRATION OF HOLES IN SILICON DIOXIDE [J].

NING, TH .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) :1079-1081

[20] SPATIAL DEPENDENCE OF TRAPPED HOLES DETERMINED FROM TUNNELING ANALYSIS AND MEASURED ANNEALING [J].

OLDHAM, TR ;

LELIS, AJ ;

MCLEAN, FB .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) :1203-1209

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