ENHANCED DIFFUSION OF IMPLANTED ARSENIC IN SILICON AT AN EARLY STAGE OF ANNEALING

被引：4

作者：

SASAKI, Y

ITOH, K

TANUMA, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1989年 / 28卷 / 08期

关键词：

D O I：

10.1143/JJAP.28.1421

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1421 / 1425

页数：5

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