ROOM-TEMPERATURE PHOTOMAGNETOELECTRIC AND PHOTOCONDUCTIVE EFFECTS IN AU-DOPED SILICON

被引：8

作者：

LI, SS

TSENG, HF

机构：

来源：

PHYSICAL REVIEW B-SOLID STATE | 1971年 / 4卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.4.490

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：490 / &

共 15 条

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[4]

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[5]

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[7] PROPERTIES OF GOLD-DOPED SILICON [J].

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GALLAGHER, CJ .

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[8]

FAIRFIELD JM, 1965, J SOLID STATE ELECTR, V8, P685

[9] EFFECTS OF TEMPERATURE, PHOTOINJECTION, AND MAGNETIC FIELD ON PHOTOMAGNETOELECTRIC RESPONSE IN AS-DOPED SI [J].

LI, SS .

PHYSICAL REVIEW, 1969, 188 (03) :1246-&

[10] ELECTRON-HOLE RECOMBINATION STATISTICS IN SEMICONDUCTORS THROUGH FLAWS WITH MANY CHARGE CONDITIONS [J].

SAH, CT ;

SHOCKLEY, W .

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