QUANTIZED STATES IN DELTA-DOPED SI LAYERS

被引：28

作者：

EISELE, I

机构：

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1989年 / 6卷 / 01期

关键词：

D O I：

10.1016/0749-6036(89)90107-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：123 / 128

页数：6

共 10 条

[1]

EISELE I, IN PRESS APPLIED SUR

[2] SECONDARY IMPLANTATION OF SB INTO SI MOLECULAR-BEAM EPITAXY LAYERS [J].

JORKE, H ;

HERZOG, HJ ;

KIBBEL, H .

APPLIED PHYSICS LETTERS, 1985, 47 (05) :511-513

[3] EVAPORATIVE ANTIMONY DOPING OF SILICON DURING MOLECULAR-BEAM EPITAXIAL-GROWTH [J].

METZGER, RA ;

ALLEN, FG .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) :931-940

[4] DOPING OF SILICON IN MOLECULAR-BEAM EPITAXY SYSTEMS BY SOLID-PHASE EPITAXY [J].

STREIT, D ;

METZGER, RA ;

ALLEN, FG .

APPLIED PHYSICS LETTERS, 1984, 44 (02) :234-236

[5] SILICON MOLECULAR-BEAM EPITAXY WITH ANTIMONY ION DOPING [J].

SUGIURA, H .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2630-2633

[6]

TEMPEL G, 1987, J PHYS PARIS S, V11, P259

[7] MANY-BODY EFFECTS IN N-TYPE SI INVERSION LAYERS .2. EXCITATIONS TO HIGHER SUBBANDS [J].

VINTER, B .

PHYSICAL REVIEW B, 1977, 15 (08) :3947-3958

[8] SCHOTTKY-BARRIER TUNNELING SPECTROSCOPY FOR THE ELECTRONIC SUBBANDS OF A DELTA-DOPING LAYER [J].

ZACHAU, M ;

KOCH, F ;

PLOOG, K ;

ROENTGEN, P ;

BENEKING, H .

SOLID STATE COMMUNICATIONS, 1986, 59 (08) :591-594

[9] GROWTH AND CHARACTERIZATION OF A DELTA-FUNCTION DOPING LAYER IN SI [J].

ZEINDL, HP ;

WEGEHAUPT, T ;

EISELE, I ;

OPPOLZER, H ;

REISINGER, H ;

TEMPEL, G ;

KOCH, F .

APPLIED PHYSICS LETTERS, 1987, 50 (17) :1164-1166

[10]

ZEINDL HP, 1987, 2ND P INT S SI MBE H, P515

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