NONDESTRUCTIVE CONCENTRATION DEPTH PROFILING OF NATIVE-OXIDE INP(100) SAMPLES BY ANGLE-RESOLVED X-RAY-INDUCED PHOTOELECTRON-SPECTROSCOPY - EFFECT OF ANNEALING

被引：14

作者：

ZEMEK, J ^{[1
]}

BASCHENKO, OA ^{[1
]}

TYZYKHOV, MA ^{[1
]}

机构：

[1] N S KURNAKOV GEN & INORGAN CHEM, MOSCOW, RUSSIA

来源：

THIN SOLID FILMS | 1993年 / 224卷 / 02期

关键词：

D O I：

10.1016/0040-6090(93)90424-N

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Angle-resolved X-ray induced photoelectron spectroscopy was used to study native as-grown and annealed oxides on the InP(100) surface and the oxide-substrate interface. Depth concentration profiles were calculated from angle-resolved photoelectron intensities by a unique recently developed numerical method which also takes into account elastic scattering of the photoelectrons in question and the finite analyzer acceptance angle. The results reveal compositional changes within the oxide layer as a function of the annealing temperature and a phosphorus deficiency beneath the oxide-InP(100) interface.

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收藏

页码：141 / 147

页数：7

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