MOLECULAR-BEAM EPITAXY OF III-V COMPOUNDS - TECHNOLOGY AND GROWTH-PROCESS

被引：47

作者：

PLOOG, K

机构：

来源：

ANNUAL REVIEW OF MATERIALS SCIENCE | 1981年 / 11卷

关键词：

D O I：

10.1146/annurev.ms.11.080181.001131

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：171 / 210

页数：40

相关论文

共 118 条

[21] FILM DEPOSITION BY MOLECULAR-BEAM TECHNIQUES
CHO, AY
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (05): : S31 - &
[22] BONDING DIRECTION AND SURFACE-STRUCTURE ORIENTATION ON GAAS (001)
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 2841 - 2843
[23] CONTINUOUS ROOM-TEMPERATURE OPERATION OF GAAS-AL-XGA-1-XAS DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY
CHO, AY
DIXON, RW
CASEY, HC
HARTMAN, RL
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (09) : 501 - 503
[24] SURFACE STRUCTURES AND PHOTOLUMINESCENCE OF MOLECULAR BEAM EPITAXIAL FILMS OF GAAS
CHO, AY
HAYASHI, I
[J]. SOLID-STATE ELECTRONICS, 1971, 14 (02) : 125 - &
[25] GAAS EPITAXY BY A MOLECULAR BEAM METHOD - OBSERVATIONS OF SURFACE STRUCTURE ON (001) FACE
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 2074 - &
[26] MORPHOLOGY OF EPITAXIAL GROWTH OF GAAS BY A MOLECULAR BEAM METHOD - OBSERVATION OF SURFACE STRUCTURES
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) : 2780 - &
[27] GAAS-ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY
CHO, AY
CASEY, HC
[J]. APPLIED PHYSICS LETTERS, 1974, 25 (05) : 288 - 290
[28] P-N JUNCTION FORMATION DURING MOLECULAR-BEAM EPITAXY OF GE-DOPED GAAS
CHO, AY
HAYASHI, I
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4422 - &
[29] EPITAXY OF SILICON DOPED GALLIUM ARSENIDE BY MOLECULAR BEAM METHOD
CHO, AY
HAYASHI, I
[J]. METALLURGICAL TRANSACTIONS, 1971, 2 (03): : 777 - &
[30] MAGNESIUM-DOPED GAAS AND ALXGA1-XAS BY MOLECULAR-BEAM EPITAXY
CHO, AY
PANISH, MB
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) : 5118 - 5123

← 1 2 3 4 5 6 7 8 9 10 →