QUANTUM-WELL INP-IN1-XGAXP1-ZASZ HETEROSTRUCTURE LASERS GROWN BY LIQUID-PHASE EPITAXY (LPE)

被引：41

作者：

REZEK, EA ^{[1
]}

CHIN, R ^{[1
]}

HOLONYAK, N ^{[1
]}

KIRCHOEFER, SW ^{[1
]}

KOLBAS, RM ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1980年 / 9卷 / 01期

关键词：

D O I：

10.1007/BF02655212

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1 / 27

页数：27

共 27 条

[21] BANDFILLING IN LIQUID-PHASE EPITAXIAL INP-IN1-XGAXP1-ZASZ-INP QUANTUM-WELL HETEROSTRUCTURE LASERS [J].

REZEK, EA ;

VOJAK, BA ;

HOLONYAK, N .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) :5398-5403

[22] PHONON-ASSISTED RECOMBINATION IN A MULTIPLE-QUANTUM-WELL LPE INP-IN1-XGAXP1-ZASZ HETEROSTRUCTURE LASER [J].

REZEK, EA ;

CHIN, R ;

HOLONYAK, N ;

KIRCHOEFER, SW ;

KOLBAS, RM .

APPLIED PHYSICS LETTERS, 1979, 35 (01) :45-47

[23] SINGLE AND MULTIPLE THIN-LAYER (LZ LESS-THAN-OR-EQUAL-TO 400 A) IN1-XGAXP1-ZASZ-INP HETEROSTRUCTURE LIGHT EMITTERS AND LASERS (LAMBDA-1.1 MUM, 77-DEGRESS-K) [J].

REZEK, EA ;

HOLONYAK, N ;

VOJAK, BA ;

SHICHIJO, H .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (01) :69-74

[24] LPE IN1-XGAXP1-ZASZ(X-0.12,Z-0.26) DH LASER WITH MULTIPLE THIN-LAYER (LESS-THAN 500 A) ACTIVE REGION [J].

REZEK, EA ;

HOLONYAK, N ;

VOJAK, BA ;

STILLMAN, GE ;

ROSSI, JA ;

KEUNE, DL ;

FAIRING, JD .

APPLIED PHYSICS LETTERS, 1977, 31 (04) :288-290

[25]

ROSSI JA, 1977, 6TH INT S GAAS REL C, P303

[26] CARRIER COLLECTION IN A SEMICONDUCTOR QUANTUM WELL [J].

SHICHIJO, H ;

KOLBAS, RM ;

HOLONYAK, N ;

DUPUIS, RD ;

DAPKUS, PD .

SOLID STATE COMMUNICATIONS, 1978, 27 (10) :1029-1032

[27] INSITU IN ETCHING TECHNIQUE FOR LPE INP [J].

WRICK, V ;

SCILLA, GJ ;

EASTMAN, LF ;

HENRY, RL ;

SWIGGARD, EM .

ELECTRONICS LETTERS, 1976, 12 (16) :394-395

← 1 2 3 →