PHOSPHORUS DOPING FOR HYDROGENATED AMORPHOUS-SILICON FILMS BY A LOW-ENERGY ION DOPING TECHNIQUE

被引：26

作者：

YOSHIDA, A

SETSUNE, K

HIRAO, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 04期

关键词：

D O I：

10.1063/1.98464

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：253 / 255

页数：3

共 9 条

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[2]

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SETSUNE, K ;

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[7] LOCAL-STRUCTURE STUDY OF TETRAHEDRALLY-BONDED AMORPHOUS-SEMICONDUCTORS BY NMR, ELECTRON-SPIN-RESONANCE AND RAMAN SPECTROSCOPIES [J].

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[9]

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