MECHANISM OF RAPID THERMAL NITRIDATION OF THIN OXIDES

被引：7

作者：

SHIH, DK

JOSHI, AB

KWONG, DL

机构：

[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas at Austin, Austin

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 11期

关键词：

D O I：

10.1063/1.346959

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The nitrogen/oxygen replacement reaction which occurs during rapid thermal nitridation (RTN) of oxides has been investigated by Auger electron spectroscopy and Fourier transform infrared spectroscopy techniques. Results have indicated that out-diffusion rate of nitridation by-products is responsible for the observed nitrogen profile in RTN oxides. Based on the results, an attempt has been made to describe the mechanism of the nitridation reaction. The proposed mechanism considers the diffusion of NHx species and nitridation by-products along with the structural modifications in SiO2 during RTN. Electrical measurements on metal-oxide-semiconductor capacitors were used to further support the proposed mechanism for the nitridation process.

引用

页码：5851 / 5855

页数：5

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