ELECTRICAL CHARACTERIZATION OF CRYSTAL DEFECTS AND OXYGEN IN CZOCHRALSKI SILICON USING A GATE-CONTROLLED DIODE

被引：5

作者：

MATSUOKA, Y

IKUTA, K

机构：

来源：

SOLID-STATE ELECTRONICS | 1981年 / 24卷 / 11期

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D O I：

10.1016/0038-1101(81)90129-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：1015 / &

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共 33 条

[1] PRECIPITATION OF OXYGEN IN SILICON
FREELAND, PE
JACKSON, KA
LOWE, CW
PATEL, JR
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (01) : 31 - 33
[2] SURFACE EFFECTS ON P-N JUNCTIONS - CHARACTERISTICS OF SURFACE SPACE-CHARGE REGIONS UNDER NON-EQUILIBRIUM CONDITIONS
GROVE, AS
FITZGERALD, DJ
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (08) : 783 - +
[3] LOW OXYGEN-CONTENT CZOCHRALSKI SILICON CRYSTAL-GROWTH
HOSHIKAWA, K
KOHDA, H
HIRATA, H
NAKANISHI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (01) : L33 - L36
[4] ELECTRICAL CHARACTERIZATION OF MICRO DEFECTS IN SILICON CRYSTAL
IKUTA, K
MATSUOKA, Y
TAKAOKA, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 621 - 625
[5] INHOMOGENEOUS OXYGEN PRECIPITATION AND STACKING-FAULT FORMATION IN CZOCHRALSKI SILICON
INOUE, N
OOSAKA, J
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (11) : 2051 - 2052
[6] JENKINS MW, 1977, J ELECTROCHEM SOC, V124, P757, DOI 10.1149/1.2133401
[7] MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON
KAISER, W
FRISCH, HL
REISS, H
[J]. PHYSICAL REVIEW, 1958, 112 (05): : 1546 - 1554
[8] OXYGEN CONTENT OF SILICON SINGLE CRYSTALS
KAISER, W
KECK, PH
[J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (08) : 882 - 887
[9] RELATIONSHIP BETWEEN PROCESS-INDUCED DEFECTS AND SOFT P-N-JUNCTIONS IN SILICON DEVICES
KATZ, LE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (07) : 969 - 972
[10] MODEL FOR FORMATION OF STACKING-FAULTS IN SILICON
MAHAJAN, S
ROZGONYI, GA
BRASEN, D
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (02) : 73 - 75

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