FABRICATION OF SILICON OXYNITRIDE MASKS FOR X-RAY-LITHOGRAPHY

被引：9

作者：

CSEPREGI, L

HEUBERGER, A

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 06期

关键词：

D O I：

10.1116/1.570366

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1962 / 1964

页数：3

共 12 条

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[5] PHYSICOCHEMICAL PROPERTIES OF CHEMICAL VAPOR-DEPOSITED SILICON OXYNITRIDE FROM A SIH4-CO2-NH3-H2 SYSTEM [J].

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[7] SILICON OXYNITRIDE FILMS FROM NO-NH3-SIH4 REACTION [J].

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[8] THERMAL-STRESSES AND CRACKING RESISTANCE OF DIELECTRIC FILMS (SIN, SI3N4, AND SIO2) ON SI SUBSTRATES [J].

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[10]

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