UNDOPED SEMI-INSULATING GAAS OF VERY LOW RESIDUAL ACCEPTOR CONCENTRATION

被引：17

作者：

REICHLMAIER, S

LOHNERT, K

BAUMGARTNER, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1988年 / 27卷 / 12期

关键词：

D O I：

10.1143/JJAP.27.2329

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2329 / 2332

页数：4

共 11 条

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[10] EFFECT OF CARBON CONCENTRATION ON THERMAL-CONVERSION IN SEMIINSULATING GAAS [J].

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