FLUORINATION OF THE SILICON DIOXIDE SURFACE DURING REACTIVE ION AND PLASMA-ETCHING IN HALOCARBON PLASMAS

被引：40

作者：

ROBEY, SW

OEHRLEIN, GS

机构：

来源：

SURFACE SCIENCE | 1989年 / 210卷 / 03期

关键词：

D O I：

10.1016/0039-6028(89)90604-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

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收藏

页码：429 / 448

页数：20

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