RECOMBINATION LIFETIME PROFILING IN VERY THIN SI EPITAXIAL LAYERS USED FOR BIPOLAR VLSI

被引:6
作者
SPIRITO, P
BELLONE, S
RANSOM, CM
BUSATTO, G
COCORULLO, G
机构
[1] IRECE,NAPLES,ITALY
[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
关键词
D O I
10.1109/55.31669
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:23 / 24
页数:2
相关论文
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