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RECOMBINATION LIFETIME PROFILING IN VERY THIN SI EPITAXIAL LAYERS USED FOR BIPOLAR VLSI
被引:6
作者
:
SPIRITO, P
论文数:
0
引用数:
0
h-index:
0
机构:
IRECE,NAPLES,ITALY
SPIRITO, P
BELLONE, S
论文数:
0
引用数:
0
h-index:
0
机构:
IRECE,NAPLES,ITALY
BELLONE, S
RANSOM, CM
论文数:
0
引用数:
0
h-index:
0
机构:
IRECE,NAPLES,ITALY
RANSOM, CM
BUSATTO, G
论文数:
0
引用数:
0
h-index:
0
机构:
IRECE,NAPLES,ITALY
BUSATTO, G
COCORULLO, G
论文数:
0
引用数:
0
h-index:
0
机构:
IRECE,NAPLES,ITALY
COCORULLO, G
机构
:
[1]
IRECE,NAPLES,ITALY
[2]
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源
:
IEEE ELECTRON DEVICE LETTERS
|
1989年
/ 10卷
/ 01期
关键词
:
D O I
:
10.1109/55.31669
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:23 / 24
页数:2
相关论文
共 6 条
[1]
BIPOLAR-TRANSISTOR FABRICATION IN LOW-TEMPERATURE (745-DEGREES-C) ULTRA-LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED EPITAXIAL SILICON
[J].
BURGER, WR
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT CHEM ENGN,CAMBRIDGE,MA 02139
BURGER, WR
;
COMFORT, JH
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT CHEM ENGN,CAMBRIDGE,MA 02139
COMFORT, JH
;
GARVERICK, LM
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT CHEM ENGN,CAMBRIDGE,MA 02139
GARVERICK, LM
;
YEW, TR
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT CHEM ENGN,CAMBRIDGE,MA 02139
YEW, TR
;
REIF, R
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT CHEM ENGN,CAMBRIDGE,MA 02139
REIF, R
.
IEEE ELECTRON DEVICE LETTERS,
1987,
8
(04)
:168
-170
[2]
FISHER SM, 1986, SOLID STATE TECHNOL, V29, P107
[3]
MEASUREMENT OF DIFFUSION LENGTH, LIFETIME, AND SURFACE RECOMBINATION VELOCITY IN THIN SEMICONDUCTOR LAYERS
[J].
GONZALEZ, FN
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV FLORIDA,DEPT ELECT ENGN,GAINESVILLE,FL 32611
UNIV FLORIDA,DEPT ELECT ENGN,GAINESVILLE,FL 32611
GONZALEZ, FN
;
NEUGROSCHEL, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV FLORIDA,DEPT ELECT ENGN,GAINESVILLE,FL 32611
UNIV FLORIDA,DEPT ELECT ENGN,GAINESVILLE,FL 32611
NEUGROSCHEL, A
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1984,
31
(04)
:413
-416
[4]
SUB-MICRON EPITAXIAL-FILMS
[J].
SILVESTRI, VJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
SILVESTRI, VJ
;
SRINIVASAN, GR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
SRINIVASAN, GR
;
GINSBERG, B
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
GINSBERG, B
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1984,
131
(04)
:877
-881
[5]
A MEASUREMENT TECHNIQUE TO OBTAIN THE RECOMBINATION LIFETIME PROFILE IN EPI LAYERS AT ANY INJECTION LEVEL
[J].
SPIRITO, P
论文数:
0
引用数:
0
h-index:
0
机构:
CNR,IST RIC ELLETROMAGNETISMO & COMPONENTI ELLETRON,NAPLES,ITALY
CNR,IST RIC ELLETROMAGNETISMO & COMPONENTI ELLETRON,NAPLES,ITALY
SPIRITO, P
;
COCORULLO, G
论文数:
0
引用数:
0
h-index:
0
机构:
CNR,IST RIC ELLETROMAGNETISMO & COMPONENTI ELLETRON,NAPLES,ITALY
CNR,IST RIC ELLETROMAGNETISMO & COMPONENTI ELLETRON,NAPLES,ITALY
COCORULLO, G
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1987,
34
(12)
:2546
-2554
[6]
MEASUREMENT OF RECOMBINATION LIFETIME PROFILES IN EPILAYERS USING A CONDUCTIVITY MODULATION TECHNIQUE
[J].
SPIRITO, P
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
SPIRITO, P
;
COCORULLO, G
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
COCORULLO, G
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1985,
32
(09)
:1708
-1713
←
1
→
共 6 条
[1]
BIPOLAR-TRANSISTOR FABRICATION IN LOW-TEMPERATURE (745-DEGREES-C) ULTRA-LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED EPITAXIAL SILICON
[J].
BURGER, WR
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT CHEM ENGN,CAMBRIDGE,MA 02139
BURGER, WR
;
COMFORT, JH
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT CHEM ENGN,CAMBRIDGE,MA 02139
COMFORT, JH
;
GARVERICK, LM
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT CHEM ENGN,CAMBRIDGE,MA 02139
GARVERICK, LM
;
YEW, TR
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT CHEM ENGN,CAMBRIDGE,MA 02139
YEW, TR
;
REIF, R
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT CHEM ENGN,CAMBRIDGE,MA 02139
REIF, R
.
IEEE ELECTRON DEVICE LETTERS,
1987,
8
(04)
:168
-170
[2]
FISHER SM, 1986, SOLID STATE TECHNOL, V29, P107
[3]
MEASUREMENT OF DIFFUSION LENGTH, LIFETIME, AND SURFACE RECOMBINATION VELOCITY IN THIN SEMICONDUCTOR LAYERS
[J].
GONZALEZ, FN
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV FLORIDA,DEPT ELECT ENGN,GAINESVILLE,FL 32611
UNIV FLORIDA,DEPT ELECT ENGN,GAINESVILLE,FL 32611
GONZALEZ, FN
;
NEUGROSCHEL, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV FLORIDA,DEPT ELECT ENGN,GAINESVILLE,FL 32611
UNIV FLORIDA,DEPT ELECT ENGN,GAINESVILLE,FL 32611
NEUGROSCHEL, A
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1984,
31
(04)
:413
-416
[4]
SUB-MICRON EPITAXIAL-FILMS
[J].
SILVESTRI, VJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
SILVESTRI, VJ
;
SRINIVASAN, GR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
SRINIVASAN, GR
;
GINSBERG, B
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
GINSBERG, B
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1984,
131
(04)
:877
-881
[5]
A MEASUREMENT TECHNIQUE TO OBTAIN THE RECOMBINATION LIFETIME PROFILE IN EPI LAYERS AT ANY INJECTION LEVEL
[J].
SPIRITO, P
论文数:
0
引用数:
0
h-index:
0
机构:
CNR,IST RIC ELLETROMAGNETISMO & COMPONENTI ELLETRON,NAPLES,ITALY
CNR,IST RIC ELLETROMAGNETISMO & COMPONENTI ELLETRON,NAPLES,ITALY
SPIRITO, P
;
COCORULLO, G
论文数:
0
引用数:
0
h-index:
0
机构:
CNR,IST RIC ELLETROMAGNETISMO & COMPONENTI ELLETRON,NAPLES,ITALY
CNR,IST RIC ELLETROMAGNETISMO & COMPONENTI ELLETRON,NAPLES,ITALY
COCORULLO, G
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1987,
34
(12)
:2546
-2554
[6]
MEASUREMENT OF RECOMBINATION LIFETIME PROFILES IN EPILAYERS USING A CONDUCTIVITY MODULATION TECHNIQUE
[J].
SPIRITO, P
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
SPIRITO, P
;
COCORULLO, G
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
COCORULLO, G
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1985,
32
(09)
:1708
-1713
←
1
→