TRANSMISSION ELECTRON-MICROSCOPE STUDY OF ION AND ELECTRON-BEAM INDUCED STRUCTURAL-CHANGES IN A-GE0.25SE0.75 INORGANIC RESIST THIN-FILMS

被引:4
作者
BALASUBRAMANYAM, K
CHEN, LJ
RUOFF, AL
WOLF, ED
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D O I
10.1063/1.331405
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O59 [应用物理学];
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页码:5975 / 5978
页数:4
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共 11 条
[1]   OBLIQUE DEPOSITION ENHANCED SENSITIVITY IN ELECTRON-BEAM EXPOSED G-GEXSE1-X INORGANIC RESIST [J].
BALASUBRAMANYAM, K ;
RUOFF, AL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :1374-1378
[2]   AN INORGANIC RESIST FOR ION-BEAM MICROFABRICATION [J].
BALASUBRAMANYAM, K ;
KARAPIPERIS, L ;
LEE, CA ;
RUOFF, AL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (01) :18-22
[3]  
BALASUBRAMANYAM K, UNPUB MICROELECTRON
[4]   WHISKER GROWTH INDUCED BY AG PHOTODOPING IN GLASSY GEXSE1-X FILMS [J].
CHEN, CH ;
TAI, KL .
APPLIED PHYSICS LETTERS, 1980, 37 (12) :1075-1077
[5]  
CHEN CH, 1980, APPL PHYS LETT, V37, P205
[6]   ELECTROCHEMICAL ADSORPTION OF METALS ON AMORPHOUS SE-GE FILMS [J].
SINGH, B ;
CHOPRA, KL .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) :428-433
[7]   PARAMAGNETIC STATES INDUCED IN AMORPHOUS AS, SE, AND AS2SE3 BY ELECTRON-BOMBARDMENT AT 77-K [J].
TAYLOR, PC ;
STROM, U ;
BISHOP, SG .
PHYSICAL REVIEW B, 1978, 18 (01) :511-515
[8]   THE CHEMICAL-REACTIVITY AND LITHOGRAPHIC SENSITIVITY OF OBLIQUELY DEPOSITED GERMANIUM SELENIDE FILMS USED AS LOW-ENERGY ION-BEAM RESISTS [J].
VENKATESAN, T .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :1368-1373
[9]   GERMANIUM SELENIDE - A RESIST FOR LOW-ENERGY ION-BEAM LITHOGRAPHY [J].
WAGNER, A ;
BARR, D ;
VENKATESAN, T ;
CRANE, WS ;
LAMBERTI, VE ;
TAI, KL ;
VADIMSKY, RG .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :1363-1367
[10]   NOVEL INORGANIC PHOTORESIST UTILIZING AG PHOTODOPING IN SE-GE GLASS-FILMS [J].
YOSHIKAWA, A ;
OCHI, O ;
NAGAI, H ;
MIZUSHIMA, Y .
APPLIED PHYSICS LETTERS, 1976, 29 (10) :677-679