共 11 条
[1]
OBLIQUE DEPOSITION ENHANCED SENSITIVITY IN ELECTRON-BEAM EXPOSED G-GEXSE1-X INORGANIC RESIST
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1981, 19 (04)
:1374-1378
[2]
AN INORGANIC RESIST FOR ION-BEAM MICROFABRICATION
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1981, 19 (01)
:18-22
[3]
BALASUBRAMANYAM K, UNPUB MICROELECTRON
[5]
CHEN CH, 1980, APPL PHYS LETT, V37, P205
[7]
PARAMAGNETIC STATES INDUCED IN AMORPHOUS AS, SE, AND AS2SE3 BY ELECTRON-BOMBARDMENT AT 77-K
[J].
PHYSICAL REVIEW B,
1978, 18 (01)
:511-515
[8]
THE CHEMICAL-REACTIVITY AND LITHOGRAPHIC SENSITIVITY OF OBLIQUELY DEPOSITED GERMANIUM SELENIDE FILMS USED AS LOW-ENERGY ION-BEAM RESISTS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1981, 19 (04)
:1368-1373
[9]
GERMANIUM SELENIDE - A RESIST FOR LOW-ENERGY ION-BEAM LITHOGRAPHY
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1981, 19 (04)
:1363-1367