STRESS-FREE GAAS GROWN ON SI USING A STRESS BALANCE APPROACH

被引：2

作者：

FREUNDLICH, A ^{[1
]}

GRENET, JC ^{[1
]}

NEU, G ^{[1
]}

STOBL, G ^{[1
]}

机构：

[1] UNIV HOUSTON,CTR SPACE VACUUM EPITAXY,HOUSTON,TX 77204

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 27期

关键词：

D O I：

10.1063/1.105634

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel technique, based on a stress balance principle, is proposed to control residual stress magnitude in GaAs layers grown on Si substrates. It is demonstrated that, using a suitable GaAs(1-x)Px buffer layer, room (300 K) or low (2 K) temperature stress-free GaAs can be grown on Si (100).

引用

页码：3568 / 3570

页数：3

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