ULTRAVIOLET-LIGHT IRRADIATION EFFECTS ON SILICON DOPING INTO GAAS USING DISILANE IN OMVPE

被引：4

作者：

MASHITA, M

SHIMAZU, M

ISHII, M

TSUDA, M

机构：

[1] CHIBA UNIV,FAC PHARMACEUT SCI,CHIBA 260,JAPAN

[2] OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN

来源：

APPLIED SURFACE SCIENCE | 1988年 / 33-4卷

关键词：

D O I：

10.1016/0169-4332(88)90358-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：602 / 610

页数：9

共 19 条

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