OPTICAL STUDY OF STRAINED ZNSE/GAAS AND ZNMNSE/GAAS EPILAYERS

被引：15

作者：

CHOU, WC

TWARDOWSKI, A

CHERNYU, K

CHEN, FR

HUA, CR

JONKER, BT

YU, WY

LEE, ST

PETROU, A

WARNOCK, J

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

[2] SUNY BUFFALO,DEPT SPACE RES,BUFFALO,NY 14260

[3] IBM CORP,THOMAS J WATSON RES CTR,DIV RES,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 06期

关键词：

D O I：

10.1063/1.356188

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied strain-induced band splittings of ZnSe/GaAs and Zn1-xMnxSe/GaAs epilayers of 0.064-3 mum thickness by reflectance and polarized photoluminescence. Polarized photoluminescence was found particularly useful in optical transition identification. The spectacular difference in magnetic field sensitivity of heavy hole and light hole exciton in ZnMnSe is also very helpful in transition identification. The evaluated heavy-light hole band splitting is in general accordance with previous data. An exceptionally strong variation of the strain with epilayer thickness is observed in the thickness range 0.5-2 mum.

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收藏

页码：2936 / 2940

页数：5

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