MULTIPLY SCANNED ELECTRON-BEAM ANNEALING OF SI IMPLANTED GAAS

被引:5
作者
BUJATTI, M
CETRONIO, A
NIPOTI, R
OLZI, E
机构
[1] CNR,INST LTM,I-20092 CINISELLO BALSAMO,ITALY
[2] CNR,INST LAMEL,I-40126 BOLOGNA,ITALY
关键词
D O I
10.1063/1.93088
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:334 / 336
页数:3
相关论文
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