CHARACTERIZATION OF ION-IMPLANTED LAYERS FOR GAAS-FETS

被引：1

作者：

BUJATTI, M

MARCELJA, F

机构：

来源：

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1981年 / 128卷 / 03期

关键词：

Compendex;

D O I：

10.1049/ip-i-1.1981.0028

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

TRANSISTORS, FIELD EFFECT

引用

页码：97 / 100

页数：4

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