COMPLEX-REFRACTIVE-INDEX PROFILES OF 4-MEV GE ION-IRRADIATION DAMAGE IN SILICON

被引:47
作者
HEIDEMANN, KF
机构
来源
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1981年 / 44卷 / 04期
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D O I
10.1080/01418638108222583
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:465 / 485
页数:21
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共 32 条
[1]   DENSITY OF STATES IN GAP OF TETRAHEDRALLY BONDED AMORPHOUS-SEMICONDUCTORS [J].
ADLER, D .
PHYSICAL REVIEW LETTERS, 1978, 41 (25) :1755-1758
[2]  
Baranova E. C., 1973, Radiation Effects, V18, P21, DOI 10.1080/00337577308234712
[3]   SCATTERING CHARACTERISTICS OF OPTICAL-MATERIALS [J].
BENNETT, HE .
OPTICAL ENGINEERING, 1978, 17 (05) :480-488
[4]   Z1-OSCILLATIONS IN LOW-ENERGY HEAVY-ION RANGES [J].
BESENBACHER, F ;
BOTTIGER, J ;
LAURSEN, T ;
LOFTAGER, P ;
MOLLER, W .
NUCLEAR INSTRUMENTS & METHODS, 1980, 170 (1-3) :183-188
[5]   PIEZOBIREFRINGENCE ABOVE THE FUNDAMENTAL EDGE IN SI [J].
CHANDRASEKHAR, M ;
GRIMSDITCH, MH ;
CARDONA, M .
PHYSICAL REVIEW B, 1978, 18 (08) :4301-4311
[6]   ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON [J].
CROWDER, BL ;
TITLE, RS ;
BRODSKY, MH ;
PETTIT, GD .
APPLIED PHYSICS LETTERS, 1970, 16 (05) :205-&
[7]   INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J].
DASH, WC ;
NEWMAN, R .
PHYSICAL REVIEW, 1955, 99 (04) :1151-1155
[8]   DEFECT STATES IN AMORPHOUS SILICON [J].
ELLIOTT, SR .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 38 (04) :325-334
[9]   PRODUCTION OF RADIATION DEFECTS IN SILICON AT DIFFERENT TEMPERATURES [J].
GLASER, E ;
GOTZ, G ;
WESCH, W ;
FREY, H .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 48 (1-4) :19-24
[10]   REAL AND IMAGINARY ELASTO-OPTIC CONSTANTS OF SILICON [J].
GRIMSDITCH, MH ;
KISELA, E ;
CARDONA, M .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 60 (01) :135-143