THERMAL-DISSOCIATION OF DISILANE - QUADRUPOLE MASS-SPECTROMETRY INVESTIGATION

被引：9

作者：

SIMON, J ^{[1
]}

FEURER, R ^{[1
]}

REYNES, A ^{[1
]}

MORANCHO, R ^{[1
]}

机构：

[1] ENSCT,MAT LAB,CNRS,URA 445,F-31077 TOULOUSE,FRANCE

来源：

JOURNAL OF ANALYTICAL AND APPLIED PYROLYSIS | 1992年 / 24卷 / 01期

关键词：

DISILANE; GAS PHASE; LPCVD; MASS SPECTROMETRY; PYROLYSIS; SILICON THIN FILMS;

D O I：

10.1016/0165-2370(92)80004-6

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The thermal dissociation of disilane Si2H6 as a function of temperature has been studied in an impinging jet-type low-pressure chemical vapour deposition reactor in both cold and hot wall configurations, in order to investigate the influence of homogeneous gas-phase reactions. A quadrupole mass spectrometer (QMS) coupled to the reactor with a system of prelevement near the substrate surface has been used to follow the gas-phase composition. Si2H6 begins to decompose at 400-degrees-C, giving SiH4. The formation of polysilanes SinH2(n + 1) (n = 3-5) is demonstrated and is highest at 600-degrees-C. The gas-phase evolution is correlated with the type of heating and with the growth rates observed on the substrates.

引用

页码：51 / 59

页数：9

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