THE INFLUENCE OF THERMAL POINT-DEFECTS ON THE PRECIPITATION OF OXYGEN IN DISLOCATION-FREE SILICON-CRYSTALS

被引：50

作者：

DEKOCK, AJR

VANDEWIJGERT, WM

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 11期

关键词：

D O I：

10.1063/1.92217

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：888 / 890

页数：3

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共 18 条

[11] A STUDY ON THERMALLY INDUCED MICRODEFECTS IN CZOCHRALSKI-GROWN SILICON-CRYSTALS - DEPENDENCE ON ANNEALING TEMPERATURE AND STARTING MATERIALS
MATSUSHITA, Y
KISHINO, S
KANAMORI, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (02) : L101 - L104
[12] VIBRATIONAL ABSORPTION OF CARBON IN SILICON
NEWMAN, RC
WILLIS, JB
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (02) : 373 - &
[13] OSAKA J, 1980, APPL PHYS LETT, V36, P288, DOI 10.1063/1.91464
[14] PATEL JR, 1977, SEMICONDUCTOR SILICO, P521
[15] INTRINSIC GETTERING BY OXIDE PRECIPITATE INDUCED DISLOCATIONS IN CZOCHRALSKI SI
TAN, TY
GARDNER, EE
TICE, WK
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (04) : 175 - 176
[16] VANRUN AMJ, UNPUBLISHED
[17] LIFETIME IMPROVEMENT IN CZOCHRALSKI-GROWN SILICON-WAFERS BY THE USE OF A 2-STEP ANNEALING
YAMAMOTO, K
KISHINO, S
MATSUSHITA, Y
IIZUKA, T
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (03) : 195 - 197
[18] YANG KH, 1978, PHYS STATUS SOLIDI A, V50, P221, DOI 10.1002/pssa.2210500126