SPUTTERING OF A CU SOLID BY SICL4 MOLECULES

被引：11

作者：

PARK, SC ^{[1
]}

STANSFIELD, RA ^{[1
]}

CLARY, DC ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,CHEM LAB,LENSFIELD RD,CAMBRIDGE CB2 1EW,ENGLAND

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1987年 / 20卷 / 07期

关键词：

D O I：

10.1088/0022-3727/20/7/009

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：880 / 888

页数：9

共 59 条

[1] SPUTTERING OF CHLORINATED SILICON SURFACES STUDIED BY SECONDARY ION MASS-SPECTROMETRY AND ION-SCATTERING SPECTROSCOPY [J].

BARISH, EL ;

VITKAVAGE, DJ ;

MAYER, TM .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) :1336-1342

[2] QUASICLASSICAL TRAJECTORY STUDIES OF RIGID ROTOR RIGID SURFACE SCATTERING .1. FLAT SURFACE [J].

BOWMAN, JM ;

PARK, SC .

JOURNAL OF CHEMICAL PHYSICS, 1982, 77 (11) :5441-5449

[3]

Califano S., 1976, VIBRATIONAL STATES

[4] F2 ADSORPTION ON SI OBSERVED WITH SIMS AND QCM [J].

COBURN, JW ;

KNABBE, EA ;

KAY, E .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :480-483

[5] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J].

COBURN, JW ;

WINTERS, HF .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3189-3196

[6] PLASMA-ASSISTED ETCHING IN MICROFABRICATION [J].

COBURN, JW ;

WINTERS, HF .

ANNUAL REVIEW OF MATERIALS SCIENCE, 1983, 13 :91-116

[7] USE OF OPTICAL-EMISSION SPECTROSCOPY TO STUDY HEXAFLUOROETHANE REACTIVE ION-BEAM ETCHING OF SILICON IN THE PRESENCE OF OXYGEN [J].

COX, TI ;

DESHMUKH, VGI .

APPLIED PHYSICS LETTERS, 1985, 47 (04) :378-380

[8] ANISOTROPIC ETCHING OF SIO2 IN LOW-FREQUENCY CF4/O2 AND NF3/AR PLASMAS [J].

DONNELLY, VM ;

FLAMM, DL ;

DAUTREMONTSMITH, WC ;

WERDER, DJ .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (01) :242-252

[9]

EBSWORTH EAV, 1963, VOLATILE SILICON COM

[10] ENERGY SPECTRA FOR COPPER [J].

FARMERY, BW ;

THOMPSON, MW .

PHILOSOPHICAL MAGAZINE, 1968, 18 (152) :415-&

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