DISTRIBUTION OF EXCESS VACANCIES IN BULK AT DIFFUSION OF PHOSPHORUS INTO SILICON

被引：17

作者：

MATSUMOTO, S

ARAI, E

NAKAMURA, H

NIIMI, T

机构：

[1] KEIO UNIV,FAC ENGN,DEPT ELECT ENGN,HIYOSHI,YOKOHAMA 223,JAPAN

[2] NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUNICAT LAB,MUSASHINO,TOKYO 180,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1977年 / 16卷 / 07期

关键词：

D O I：

10.1143/JJAP.16.1177

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1177 / 1185

页数：9

共 23 条

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[12]

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NAKAMURA, H ;

NIIMI, T .

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[15]

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[17] BORON-DIFFUSION COEFFICIENT INCREASED BY PHOSPHORUS DIFFUSION [J].

NAKAMURA, H ;

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TADACHI, C .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (10) :1377-1381

[18] DIFFUSION IN SILICON .2. ENHANCED DIFFUSION OF PHOSPHORUS IN SILICON [J].

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[19]

SATO Y, 1964, JPN J APPL PHYS, V3, P511

[20]

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