ELECTRICAL EFFECTS OF ATOMIC-HYDROGEN INCORPORATION IN GAAS-ON-SI

被引：25

作者：

ZAVADA, JM

PEARTON, SJ

WILSON, RG

WU, CS

STAVOLA, M

REN, F

LOPATA, J

DAUTREMONTSMITH, WC

NOVAK, SW

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

[2] HUGHES RES LABS,MALIBU,CA 90265

[3] CHARLES EVANS & ASSOCIATES,REDWOOD CITY,CA 94063

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 01期

关键词：

D O I：

10.1063/1.342547

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：347 / 353

页数：7

共 18 条

[1]

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[6] PROPERTIES OF MODFETS GROWN ON SI SUBSTRATES AT DC AND MICROWAVE-FREQUENCIES [J].

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[8]

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[9] PASSIVATION OF SI DONORS AND DX CENTERS IN ALGAAS BY HYDROGEN PLASMA EXPOSURE [J].

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