EFFECT OF SCHOTTKY-BARRIER HEIGHT ON EL2 MEASUREMENT BY DEEP-LEVEL TRANSIENT SPECTROSCOPY

被引：26

作者：

MA, QY

SCHMIDT, MT

WU, X

EVANS, HL

YANG, ES

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 05期

关键词：

D O I：

10.1063/1.341655

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2469 / 2472

页数：4

共 13 条

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[7] A NOVEL TECHNIQUE FOR STUDYING ELECTRIC-FIELD EFFECT OF CARRIER EMISSION FROM A DEEP LEVEL CENTER [J].

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[8] ELECTRON TRAPS IN BULK AND EPITAXIAL GAAS CRYSTALS [J].

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[9] ELECTRICAL STUDY OF SCHOTTKY BARRIERS ON ATOMICALLY CLEAN GAAS(110) SURFACES [J].

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