PHOTOLUMINESCENCE AND PHOTOREFLECTANCE STUDY OF SI/SI0.91GE0.09 AND SI-9/GE-6 QUANTUM DOTS

被引：21

作者：

TANG, YS

TORRES, CMS

KUBIAK, RA

WHALL, TE

PARKER, EHC

PRESTING, H

KIBBEL, H

机构：

[1] UNIV WARWICK,DEPT PHYS,COVENTRY CV4 7AL,W MIDLANDS,ENGLAND

[2] DAIMLER BENZ AG,RES CTR,D-89081 ULM,GERMANY

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1995年 / 24卷 / 02期

关键词：

PHOTOLUMINESCENCE; PHOTOREFLECTANCE; QUANTUM DOTS; SI/SIGE;

D O I：

10.1007/BF02659629

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nanometer-scale quantum dots based on a series of Si/Si0.91Ge0.09 strained layer superlattices and a Si-9/Ge-6 strain-symmetrized superlattice were fabricated using electron beam lithography and reactive ion etching. They were investigated by photoluminescence and photoreflectance. It was found for the first time that the quantum efficiency of optical emission from the quantum well layers increased by over two orders of magnitude when the quantum dot sizes were reduced to less than or equal to 100 nm.

引用

页码：99 / 106

页数：8

共 23 条

[11]

REED MA, 1989, NANOSTRUCTURE PHYSIC

[12] OPTICAL-PROPERTIES OF FREESTANDING SILICON QUANTUM WIRES [J].

SANDERS, GD ;

CHANG, YC .

APPLIED PHYSICS LETTERS, 1992, 60 (20) :2525-2527

[13] FABRICATION AND CHARACTERIZATION OF ONE-DIMENSIONAL HOLE GAS [J].

TANG, YS ;

WILKINSON, CDW ;

TORRES, CMS ;

SMITH, DW ;

WHALL, TE ;

PARKER, EHC .

SUPERLATTICES AND MICROSTRUCTURES, 1992, 12 (04) :535-537

[14] OPTICAL-PROPERTIES OF SI/SI1-XGEX HETEROSTRUCTURE BASED WIRES [J].

TANG, YS ;

WILKINSON, CDW ;

TORRES, CMS ;

SMITH, DW ;

WHALL, TE ;

PARKER, EHC .

SOLID STATE COMMUNICATIONS, 1993, 85 (03) :199-202

[15] PHOTOLUMINESCENCE FROM SI/SI0.87GE0.13 MULTIPLE-QUANTUM-WELL WIRES [J].

TANG, YS ;

TORRES, CMS ;

WILKINSON, CDW ;

SMITH, DW ;

WHALL, TE ;

PARKER, EHC .

JOURNAL DE PHYSIQUE IV, 1993, 3 (C5) :119-122

[16] OPTICAL-PROPERTIES OF SI/SI0.87GE0.13 MULTIPLE-QUANTUM-WELL WIRES [J].

TANG, YS ;

WILKINSON, CDW ;

TORRES, CMS ;

SMITH, DW ;

WHALL, TE ;

PARKER, EHC .

APPLIED PHYSICS LETTERS, 1993, 63 (04) :497-499

[17] QUANTIZED CONDUCTANCE IN A LONG SILICON INVERSION WIRE [J].

TANG, YS ;

JIN, G ;

DAVIES, JH ;

WILLIAMSON, JG ;

WILKINSON, CDW .

PHYSICAL REVIEW B, 1992, 45 (23) :13799-13802

[18] OPTICAL-PROPERTIES OF DRY-ETCHED SI/SI1-XGEX HETEROSTRUCTURE WIRES [J].

TANG, YS ;

WILKINSON, CDW ;

SMITH, DW ;

WHALL, TE ;

PARKER, EHC .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (4B) :2348-2352

[19]

TANG YS, 1990, J APPL PHYS, V69, P8298

[20] REALIZATION OF CRESCENT-SHAPED SIGE QUANTUM-WIRE STRUCTURES ON A V-GROOVE PATTERNED SI SUBSTRATE BY GAS-SOURCE SI MOLECULAR-BEAM EPITAXY [J].

USAMI, N ;

MINE, T ;

FUKATSU, S ;

SHIRAKI, Y .

APPLIED PHYSICS LETTERS, 1993, 63 (20) :2789-2791

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