SOME INVESTIGATIONS ON THE CHEMISORPTION AND THERMAL HETEROGENEOUS DECOMPOSITION OF THE MOCVD ADDUCT CIME2GAASET3

被引：8

作者：

MAURY, F ^{[1
]}

CONSTANT, G ^{[1
]}

FONTAINE, P ^{[1
]}

BIBERIAN, JP ^{[1
]}

机构：

[1] FAC SCI LUMINY,DEPT PHYS,CNRS,UNITE ASSOCIEE 794,F-13288 MARSEILLE 9,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 78卷 / 01期

关键词：

D O I：

10.1016/0022-0248(86)90517-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：185 / 188

页数：4

共 10 条

[1] THE USE OF A METALORGANIC COMPOUND FOR THE GROWTH OF INP-EPITAXIAL LAYERS
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PILKUHN, MH
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (01) : 185 - 192
[2] EPITAXIAL-GROWTH OF GAAS1-XPX(0 LESS-THAN X LESS-THAN 0.6) BY OM-CVD FROM THE COMPLEX CLET2GA.ASET3 AND DIETHYL PHOSPHINE - A SOURCE OF THE ORIGINAL PHOSPHORUS HPET2
MAURY, F
CONSTANT, G
[J]. JOURNAL OF CRYSTAL GROWTH, 1983, 62 (03) : 568 - 576
[3] MOVPE OF GAAS FROM THE NEW ADDUCTS [CIME2GA.ASET2]2CH2, [CIET2GA.ASET2]2CH2 AND (C6F5)3-0,2ME0,2GA.ASET3
MAURY, F
ELHAMMADI, A
CONSTANT, G
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 88 - 95
[4] OMVPE GROWTH OF GALLIUM INDIUM-PHOSPHIDE ON THE (100) GALLIUM-ARSENIDE USING ADDUCT COMPOUNDS
MINAGAWA, S
NAKAMURA, H
SANO, H
[J]. JOURNAL OF CRYSTAL GROWTH, 1985, 71 (02) : 377 - 384
[5] A NEW APPROACH TO MOCVD OF INDIUM-PHOSPHIDE AND GALLIUM-INDIUM ARSENIDE
MOSS, RH
EVANS, JS
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 129 - 134
[6] DEPOSITION OF GAAS EPITAXIAL LAYERS BY ORGANOMETALLIC CVD - TEMPERATURE AND ORIENTATION DEPENDENCE
REEP, DH
GHANDHI, SK
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : 675 - 680
[7] EXAMINATION OF PRODUCT CATALYZED REACTION OF TRIMETHYLGALLIUM WITH PHOSPHINE AND MECHANISM OF CHEMICAL VAPOR-DEPOSITION OF GALLIUM-PHOSPHIDE AND GALLIUM-ARSENIDE
SCHLYER, DJ
RING, MA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (04) : 569 - 573
[8] VARIOUS CHEMICAL MECHANISMS FOR THE CRYSTAL-GROWTH OF III-V SEMICONDUCTORS USING COORDINATION-COMPOUNDS AS STARTING MATERIAL IN THE MOCVD PROCESS
ZAOUK, A
SALVETAT, E
SAKAYA, J
MAURY, F
CONSTANT, G
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 135 - 144
[9] EPITAXIAL-GROWTH OF GALLIUM-ARSENIDE BY CHEMICAL-DEPOSITION IN THE VAPOR-PHASE FROM A NEW ORGANOMETALLIC COMPOUND, MONOCHLORODIMETHYLGALLIUM TRIETHYTHLARSINE
ZAOUK, A
CONSTANT, G
[J]. JOURNAL DE PHYSIQUE, 1982, 43 (NC-5): : 421 - 426
[10] ZAOUK A, 1983, THESIS I NATIONAL PO

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