NONTRAP CAPACITANCE DISPERSION IN SE-SCHOTTKY DIODES

被引：9

作者：

CHAMPNESS, CH

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 03期

关键词：

D O I：

10.1063/1.339700

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：917 / 921

页数：5

共 9 条

[1]

CHAMPNESS CH, 1985, J APPL PHYS, V57, P4823, DOI 10.1063/1.335301

[2] REVERSE CHARACTERISTICS OF RECTIFYING TE-SE-CD STRUCTURES [J].

CHAMPNESS, CH ;

ELAZAB, MI .

SOLID-STATE ELECTRONICS, 1981, 24 (07) :643-648

[3]

CHAMPNESS CH, 1984, MATER RES SOC S P, V25, P625

[4]

CHAMPNESS CH, 1986, SEMICONDUCTOR BASED, P139

[5] ELECTRICAL FORMING ACTION IN TE-SE-CD STRUCTURES [J].

ELAZAB, MI ;

CHAMPNESS, CH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) :255-260

[6] A STUDY OF THE DEEP CARRIER TRAPS IN A TE-SE-CD RECTIFYING STRUCTURE [J].

HOUSIN, M ;

BASTIDE, G ;

SAGNES, G ;

ROUZEYRE, M ;

CHAMPNESS, CH ;

ELAZAB, MI .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) :4885-4888

[7] CAPACITANCE ENERGY LEVEL SPECTROSCOPY OF DEEP-LYING SEMICONDUCTOR IMPURITIES USING SCHOTTKY BARRIERS [J].

ROBERTS, GI ;

CROWELL, CR .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) :1767-+

[8] FREQUENCY DEPENDENCE OF REVERSE-BIASED CAPACITANCE OF GOLD-DOPED SILICON P+N STEP JUNCTIONS [J].

SAH, CT ;

REDDI, VGK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) :345-+

[9] EXTENT OF CDSE PRESENCE AT FORMED SE-CD CONTACTS [J].

SEWELL, PB ;

CHAMPNESS, CH ;

ELAZAB, M ;

GENNAOUI, F .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 42 (02) :315-318

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