CHEMICALLY ASSISTED ION-BEAM ETCHING OF POLYCRYSTALLINE AND (100)TUNGSTEN

被引：6

作者：

GARNER, C

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 01期

关键词：

D O I：

10.1116/1.583896

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：332 / 336

页数：5

共 12 条

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[10] ETCH PRODUCTS FROM THE REACTION ON CL-2 WITH AL(100) AND CU(100) AND XEF2 WITH W(111) AND NB [J].

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